feb.1999 mitsubishi semiconductor thyristor ? CR05AS low power use non-insulated type, planar passivation type CR05AS application solid state relay, strobe flasher, ignitor, hybrid ic ?i t (av) ........................................................................ 0.5a ?v drm ..............................................................200v/400v ?i gt ......................................................................... 100 m a symbol v rrm v rsm v r (dc) v drm v d (dc) parameter repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage repetitive peak off-state voltage ] 1 dc off-state voltage ] 1 voltage class unit v v v v v maximum ratings 4 (marked cb) 200 300 160 200 160 8 (marked cd) 400 500 320 400 320 symbol i t (rms) i t (av) i tsm i 2 t p gm p g (av) v fgm v rgm i fgm t j t stg parameter rms on-state current average on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate forward voltage peak gate reverse voltage peak gate forward current junction temperature storage temperature weight conditions commercial frequency, sine half wave, 180 conduction, t a =57 c ] 2 60hz sine half wave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a a 2 s w w v v a c c mg ratings 0.79 0.5 10 0.4 0.1 0.01 6 6 0.1 C40 ~ +125 C40 ~ +125 48 ] 1. with gate-to-cathode resistance r gk =1k w 2 1 3 1
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3 t 1 terminal t 2 terminal gate terminal 4.4?.1 1.5?.1 1.6?.2 0.4?.07 0.8 min 2.5?.1 3.9?.3 0.4 +0.03 ?.05 1 2 3 (back side) outline drawing dimensions in mm sot-89 0.5?.07 1.5?.1 1.5?.1
feb.1999 mitsubishi semiconductor thyristor ? CR05AS low power use non-insulated type, planar passivation type ] 2. soldering with ceramic plate (25mm 25mm t0.7). ] 3. if special values of i gt are required, choose at least two items from those listed in the table below. (example: ab, bc) the above values do not include the current flowing through the 1k w resistance between the gate and cathode. b 20 ~ 50 item i gt ( m a) a 1 ~ 30 c 40 ~ 100 electrical characteristics test conditions t j =125 c, v rrm applied t j =125 c, v drm applied, r gk =1k w t a =25 c, i tm =1.5a, instantaneous value t a =25 c, v d =6v, i t =0.1a ] 4 t j =125 c, v d =1/2v drm , r gk =1k w t j =25 c, v d =6v, i t =0.1a ] 4 t j =25 c, v d =12v, r gk =1k w junction to ambient ] 2 unit ma ma v v v m a ma c/w typ. symbol i rrm i drm v tm v gt v gd i gt i h r th (j-a) parameter repetitive peak reverse current repetitive peak off-state current on-state voltage gate trigger voltage gate non-trigger voltage gate trigger current holding current thermal resistance limits min. 0.2 1 max. 0.1 0.1 1.9 0.8 100 ] 3 3 70 3v dc i gs i gt 6v dc 60 w v gt 2 1 tut 1k w r gk a3 a2 v1 a1 switch 1 : i gt measurement switch 2 : v gt measurement (inner resistance of voltage meter is about 1k w ) ] 4. i gt , v gt measurement circuit. switch 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 3 1 5 7 9 0 5 01 4 23 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t a = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) performance curves
feb.1999 mitsubishi semiconductor thyristor ? CR05AS low power use non-insulated type, planar passivation type 10 2 10 ? 10 0 10 1 10 1 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 10 ? 10 2 23 57 23 57 v fgm = 6v v gt = 0.8v i gt = 100? (t j = 25?) p gm = 0.1w p g(av) = 0.01w v gd = 0.2v i fgm = 0.1a 200 160 140 120 60 80 20 0 160 ?0 ?0 20 80 140 120 40 100 180 060 40 100 # 1 # 2 i gt (25?) # 1 32? # 2 9? typical example 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 160 ?0 ?0 20 80 140 120 0.2 0.5 0.9 060 40 100 typical example distribution 1.5 0.5 1.0 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q 360 q = 30 60 90 180 120 resistive, inductive loads maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) gate trigger voltage vs. junction temperature gate trigger voltage ( v ) junction temperature (?) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance (?/ w) time (s) gate voltage (v) gate current (ma) gate current vs. junction temperature junction temperature (?) 100 (%) gate current (t j = t c ) gate current (t j = 25 ? ) 23 10 0 5710 1 23 5710 2 23 5710 3 10 1 23 10 ? 5710 ? 23 5710 ? 23 5710 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 aluminum board with soldering 25 25 t0.7 see * 3 gate characteristics 60 ?0 ?0 ?0 0 20 40 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 typical example gate trigger current vs. junction temperature junction temperature (?) 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?)
feb.1999 mitsubishi semiconductor thyristor ? CR05AS low power use non-insulated type, planar passivation type 1.5 1.0 0.5 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q 360 resistive, inductive loads q = 30 60 120 90 180 270 dc 1.5 1.0 0.5 0 0.8 0 0.2 0.4 0.6 0.7 0.1 0.3 0.5 q = 30 60 120 90 180 q q 360 resistive loads 160 120 60 40 20 140 100 80 0 160 ?0 0 40 80 120 140 ?0 20 60 100 r gk = 1k w typical example allowable ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (single-phase full wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (single-phase full wave) ambient temperature (?) average on-state current (a) maximum average power dissipation (rectangular wave) average power dissipation (w) average on-state current (a) allowable ambient temperature vs. average on-state current (rectangular wave) ambient temperature (?) average on-state current (a) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 q 360 resistive, inductive loads natural convection aluminum board with soldering 25 25 t0.7 q = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 q q 360 resistive loads natural convection aluminum board with soldering 25 25 t0.7 q = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.8 0 0.2 0.4 0.6 q = 30 120 180 dc 270 60 90 q 360 resistive, inductive loads aluminum board with soldering 25 25 t0.7 natural convection
feb.1999 mitsubishi semiconductor thyristor ? CR05AS low power use non-insulated type, planar passivation type 160 120 100 40 60 20 0 160 ?0 ?0 20 80 140 120 80 140 060 40 100 typical example repetitive peak reverse voltage vs. junction temperature junction temperature (?) 100 (%) repetitive peak reverse voltage (t j = t c ) repetitive peak reverse voltage (t j = 25 ? ) 23 10 ? 5710 0 23 5710 1 23 5710 2 120 0 80 100 40 60 20 t j = 125? typical example breakover voltage vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) breakover voltage ( r gk = r k w ) breakover voltage ( r gk = 1k w ) 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 80 100 40 60 20 # 1 # 2 typical example # 1 i gt (25?)= 10? # 2 i gt (25?)= 66? t j = 125?, r gk = 1k w breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = vv/? ) breakover voltage ( dv/dt = 1v/? ) 60 ?0 ?0 ?0 0 20 40 80 100 120 140 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? typical example distribution holding current vs. junction temperature holding current (ma) junction temperature (?) t j = 25? i h (25?) = 1ma i gt (25?) = 25? 23 10 ? 5710 0 23 5710 1 23 5710 2 500 0 200 300 400 100 # 1 # 2 holding current vs. gate to cathode resistance gate to cathode resistance (k w ) 100 (%) holding current ( r gk = r k w ) holding current ( r gk = 1k w ) # 1 13? 1.6ma # 2 59? 1.8ma typical example i h (1k w ) i gt (25?) t j = 25? 10 2 2 23 10 0 45 710 1 345 7 10 2 7 5 10 3 4 3 2 7 5 2 4 3 10 1 # 1 # 2 gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) typical example i gt (25?) # 1 10? # 2 66? t j = 25?
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